National Stock Number (NSN) Output Data
NSN:
NIIN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| IDT7M864L120CB | 61772 | A | 3 | 2 | E | TX | ||
| F17006404 | 6Z076 | F | 5 | 9 | 4 | 48 | ||
| F17006404 | 65519 | F | C | 1 | 5 | 48 | AH | |
| HM6264LP-12 | 52531 | A | 5 | 9 | 5 | TX | ||
| F52001708 | 65519 | F | C | 1 | 5 | 48 | AH | |
| F52001708 | 6Z076 | F | 5 | 9 | 4 | 48 | ||
| 725004-944 | 05869 | A | C | 1 | 6 | ZZ | AC |
CAGE Information
| Code | Company |
|---|---|
| 05869 | RAYTHEON COMPANY DBA RAYTHEON |
| 61772 | INTEGRATED DEVICE TECHNOLOGY INC |
| 6Z076 | WESPERCORP FSG INC |
| 65519 | FSG INC |
| 52531 | HITACHI MAGNETICS CORP DIV OF HITACH |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| CQZP | INPUT CIRCUIT PATTERN | 23 INPUT |
| ADAU | BODY HEIGHT | 0.280 INCHES MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND HIGH SPEED AND LOW POWER AND MONOLITHIC |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 4.0 WATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CSWJ | WORD QUANTITY (NON-CORE) | 8192 |
| ADAQ | BODY LENGTH | 1.400 INCHES NOMINAL |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| ADAT | BODY WIDTH | 0.594 INCHES NOMINAL |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD |
| CRHL | BIT QUANTITY (NON-CORE) | 65536 |
| CZER | MEMORY DEVICE TYPE | RAM |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
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