National Stock Number (NSN) Output Data
NSN:
NIIN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 920986-1 | 06481 | A | 3 | 2 | 1 | TX | ||
| S8285A | 34335 | A | 5 | 9 | 4 | TX | ||
| S8285F | 18324 | A | 5 | 1 | 3 | TX | ||
| 920986-1 | 34335 | A | 5 | 9 | 5 | TX | ||
| N8285A | 18324 | A | C | 1 | 6 | ZZ | AC | |
| 920986-1 | 18324 | A | 5 | 2 | 5 | TX |
CAGE Information
| Code | Company |
|---|---|
| 06481 | NORTHROP GRUMMAN GUIDANCE AND ELECTR |
| 34335 | ADVANCED MICRO DEVICES, INC. DBA A M |
| 18324 | PHILIPS SEMICONDUCTORS INC |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| TTQY | TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 420.0 MILLIWATTS |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CBBL | FEATURES PROVIDED | POSITIVE OUTPUTS AND HERMETICALLY SEALED AND MONOLITHIC AND MEDIUM SPEED AND BIDIRECTIONAL AND RESETTABLE AND FAST CARRY AND W/ENABLE AND ASYNCHRONOUS AND SYNCHRONOUS AND NEGATIVE EDGE TRIGGERED |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| ADAQ | BODY LENGTH | 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |