National Stock Number (NSN) Output Data
NSN:
NIIN:
Item Name:
MICROCIRCUIT , MEMORY
Definition:
A CIRCUIT DESIGNED TO STORE INFORMATION AND/OR CODED INSTRUCTIONS FOR LATER USE. ITEM HAS PINS OR OTHER CONNECTIONS TO INSTALL IN A COMPUTER OR COMPUTING DEVICE. DOES NOT INCLUDE MAGNETIC DRUMS, TAPES, PUNCHED CARDS OR THE LIKE. FOR ITEMS THAT HAVE PORTABLE TYPE CONNECTIONS SEE MEMORY, PORTABLE, SOLID STATE.
Reference/Part Number
| Part Number | CAGE | Status | RNCC | RNVC | DAC | RNAAC | MSDS | SADC |
|---|---|---|---|---|---|---|---|---|
| 979734-103 | 3B150 | A | 3 | 2 | A | ZZ | ||
| 979734-103 | 49956 | A | 5 | 9 | A | ZZ | ||
| DM54S475AJ | 27014 | A | 5 | 9 | E | ZZ | ||
| ROM/PROM FAMILY 038 | 16236 | A | 5 | 1 | 9 | ZZ | ||
| 54S475J/883 | 3V146 | A | 5 | 1 | E | ZZ |
CAGE Information
| Code | Company |
|---|---|
| 16236 | DLA LAND AND MARITIME |
| 3B150 | RAYTHEON TECHNICAL SERVICES COMPANY |
| 49956 | RAYTHEON COMPANY DBA RAYTHEON |
| 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
| 3V146 | ROCHESTER ELECTRONICS LLC |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | DISPLAY CONSO E/I FSCM 49956 |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM ABSOLUTE INPUT AND -1.2 VOLTS MAXIMUM ABSOLUTE INPUT AND -0.5 VOLTS MINIMUM ABSOLUTE OUTPUT AND 5.5 VOLTS MAXIMUM ABSOLUTE OUTPUT |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CRHL | BIT QUANTITY (NON-CORE) | 4096 |
| CBBL | FEATURES PROVIDED | SCHOTTKY AND BIPOLAR AND PROGRAMMED AND HIGH IMPEDANCE AND W/OPEN COLLECTOR AND LOW VOLTAGE AND TESTED TO MIL-STD-883 |
| CZER | MEMORY DEVICE TYPE | PROM |
| CSWJ | WORD QUANTITY (NON-CORE) | 512 |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |