Part Number
Definition:
TWO OR MORE DISCRETE SEMICONDUCTOR DEVICES SUCH AS DIODE(S) AND/OR TRANSISTOR(S), PERMANENTLY CASED, ENCAPSULATED, OR POTTED TOGETHER TO FORM AN INSEPARABLE UNIT. EXCLUDES DEVICES HAVING ONE OR MORE COMPONENTS OTHER THAN SEMICONDUCTOR DEVICES. THE INDIVIDUALLY DISTINCT DEVICES FORMING THE UNIT MAY BE INTERNALLY CONNECTED. THE UNIT IN ITSELF DOES NOT PERFORM A COMPLETE SPECIFIC FUNCTION AND CANNOT BE ASSIGNED A MORE DEFINITE ITEM NAME. IT MAY INCLUDE OR CONSIST OF INSEPARABLE MATCHED PAIRS. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FORMED ON OR WITHIN A SEMICONDUCTOR MATERIAL SUBSTRATE, FORMED ON AN INSULATING SUBSTRATE OR FORMED ON A COMBINATION OF BOTH OF THESE TYPES, SEE MICROCIRCUIT (AS MODIFIED). EXCLUDES NETWORK (AS MODIFIED); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; AND SEMICONDUCTOR DEVICE ASSEMBLY. DO NOT USE IF MORE SPECIFIC NAME APPLIES.
CAGE Information
Code | Company |
---|---|
82340 | EDO CORPORATION DIV DEFENSE SYSTEMS |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
ADAV | OVERALL DIAMETER | 0.352 INCHES NOMINAL |
ADAV | OVERALL DIAMETER | 0.352 INCHES NOMINAL |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR AND 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE ALL TRANSISTOR |
CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
ABBH | INCLOSURE MATERIAL | METAL |
CTRD | POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-76 |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
ABHP | OVERALL LENGTH | 0.250 INCHES NOMINAL |
TTQY | TERMINAL TYPE AND QUANTITY | 8 UNINSULATED WIRE LEAD |
ABJT | TERMINAL LENGTH | 0.490 INCHES MINIMUM |