Part Number
Definition:
TWO OR MORE DISCRETE SEMICONDUCTOR DEVICES SUCH AS DIODE(S) AND/OR TRANSISTOR(S), PERMANENTLY CASED, ENCAPSULATED, OR POTTED TOGETHER TO FORM AN INSEPARABLE UNIT. EXCLUDES DEVICES HAVING ONE OR MORE COMPONENTS OTHER THAN SEMICONDUCTOR DEVICES. THE INDIVIDUALLY DISTINCT DEVICES FORMING THE UNIT MAY BE INTERNALLY CONNECTED. THE UNIT IN ITSELF DOES NOT PERFORM A COMPLETE SPECIFIC FUNCTION AND CANNOT BE ASSIGNED A MORE DEFINITE ITEM NAME. IT MAY INCLUDE OR CONSIST OF INSEPARABLE MATCHED PAIRS. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FORMED ON OR WITHIN A SEMICONDUCTOR MATERIAL SUBSTRATE, FORMED ON AN INSULATING SUBSTRATE OR FORMED ON A COMBINATION OF BOTH OF THESE TYPES, SEE MICROCIRCUIT (AS MODIFIED). EXCLUDES NETWORK (AS MODIFIED); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; AND SEMICONDUCTOR DEVICE ASSEMBLY. DO NOT USE IF MORE SPECIFIC NAME APPLIES.
CAGE Information
| Code | Company |
|---|---|
| 03640 | LOCKHEED MARTIN CORPORATION DBA LOCK |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| FEAT | SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP |
| FEAT | SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN ALL TRANSISTOR AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN ALL TRANSISTOR AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR |
| ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| ABBH | INCLOSURE MATERIAL | METAL |
| ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL TRANSISTOR |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| ADAV | OVERALL DIAMETER | 0.335 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |