Part Number
Part Number:
NSN:
NIIN:
Item Name:
MICROCIRCUIT , DIGITAL
Definition:
A MICROCIRCUIT SPECIFICALLY DESIGNED TO GENERATE, MODIFY, OR PROCESS ELECTRICAL SIGNALS WHICH OPERATE WITH TWO DISTINCT OR BINARY STATES. THESE STATES ARE COMMONLY REFERRED TO AS ON AND OFF, TRUE AND FALSE, HIGH AND LOW, OR "1" AND "0".
CAGE Information
| Code | Company |
|---|---|
| 37695 | RAYTHEON COMPANY DBA RAYTHEON |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | RSIP PPL |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | 1024 X 4 COMOS STATIC RAM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 0.660 WATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CSSL | DESIGN FUNCTION AND QUANTITY | 1 MEMORY, STATIC RAM |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.2 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND ELECTROSTATIC SENSITIVE AND BURN IN |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |