Part Number
Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
CAGE Information
| Code | Company |
|---|---|
| 0000V | NCB HUNGARY HONVEDSEGI EGYSEGES TERM |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| AXGY | MOUNTING METHOD | TERMINAL |
| AGAV | END ITEM IDENTIFICATION | 5865-01-188-3309 JAMMING SYSTEM,COMMUNICATIONS,GENERAL UTILITY |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 15.00 NANOAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET AND 15.00 NANOAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT MINOR |
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
| ABMK | OVERALL WIDTH | 0.145 INCHES NOMINAL |
| ABKW | OVERALL HEIGHT | 0.670 INCHES MINIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED |
| ABHP | OVERALL LENGTH | 0.190 INCHES NOMINAL |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |