Part Number
Definition:
TWO OR MORE DISCRETE SEMICONDUCTOR DEVICES SUCH AS DIODE(S) AND/OR TRANSISTOR(S), PERMANENTLY CASED, ENCAPSULATED, OR POTTED TOGETHER TO FORM AN INSEPARABLE UNIT. EXCLUDES DEVICES HAVING ONE OR MORE COMPONENTS OTHER THAN SEMICONDUCTOR DEVICES. THE INDIVIDUALLY DISTINCT DEVICES FORMING THE UNIT MAY BE INTERNALLY CONNECTED. THE UNIT IN ITSELF DOES NOT PERFORM A COMPLETE SPECIFIC FUNCTION AND CANNOT BE ASSIGNED A MORE DEFINITE ITEM NAME. IT MAY INCLUDE OR CONSIST OF INSEPARABLE MATCHED PAIRS. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FORMED ON OR WITHIN A SEMICONDUCTOR MATERIAL SUBSTRATE, FORMED ON AN INSULATING SUBSTRATE OR FORMED ON A COMBINATION OF BOTH OF THESE TYPES, SEE MICROCIRCUIT (AS MODIFIED). EXCLUDES NETWORK (AS MODIFIED); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; AND SEMICONDUCTOR DEVICE ASSEMBLY. DO NOT USE IF MORE SPECIFIC NAME APPLIES.
CAGE Information
| Code | Company |
|---|---|
| 00724 | RAYTHEON COMPANY DBA RAYTHEON |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM REVERSE VOLTAGE, PEAK 1ST SEMICONDUCTOR DEVICE DIODE |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.245 INCHES MAXIMUM |
| ABHP | OVERALL LENGTH | 0.187 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| FEAT | SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM REVERSE VOLTAGE, PEAK 2ND SEMICONDUCTOR DEVICE DIODE |
| ASKA | COMPONENT NAME AND QUANTITY | 6 SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM REVERSE VOLTAGE, PEAK 3RD SEMICONDUCTOR DEVICE DIODE |
| ABBH | INCLOSURE MATERIAL | METAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM REVERSE VOLTAGE, PEAK 4TH SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM REVERSE VOLTAGE, PEAK 5TH SEMICONDUCTOR DEVICE DIODE |
| TTQY | TERMINAL TYPE AND QUANTITY | 12 UNINSULATED WIRE LEAD |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 25.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 0.5 MAXIMUM REVERSE VOLTAGE, PEAK 6TH SEMICONDUCTOR DEVICE DIODE |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |