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Part Number

Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR

Definition:

AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.

CAGE Information

Code Company
05869 RAYTHEON COMPANY DBA RAYTHEON

Characteristics (Decoded)

MRC Requirements Statement Clear Text Reply
CTRD POWER RATING PER CHARACTERISTIC 10.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
ABHP OVERALL LENGTH 0.260 INCHES MAXIMUM
AXGY MOUNTING METHOD TERMINAL
CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION
ABBH INCLOSURE MATERIAL METAL
ALAS INTERNAL CONFIGURATION JUNCTION CONTACT
CTQX CURRENT RATING PER CHARACTERISTIC 5.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 1.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM
ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-39
CTMZ SEMICONDUCTOR MATERIAL SILICON
ADAV OVERALL DIAMETER 0.370 INCHES MAXIMUM
ABJT TERMINAL LENGTH 0.500 INCHES MAXIMUM
CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE
CTRK TRANSFER RATIO 60.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 240.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
ASCQ INTERNAL JUNCTION CONFIGURATION PNP
AYQS TERMINAL CIRCLE DIAMETER 0.200 INCHES NOMINAL
TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD

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