Part Number
Definition:
TWO OR MORE DIODE SEMICONDUCTOR DEVICES DESIGNED TO FUNCTION AS A UNIT IN CHANGING ALTERNATING CURRENT TO DIRECT CURRENT. THE DIODE DEVICES ARE INTERNALLY CONNECTED IN SERIES, AND ARE PERMANENTLY CASED, ENCAPSULATED, POTTED, OR MOLDED TOGETHER TO FORM AN INSEPARABLE UNIT. THESE UNITS MAY BE DESIGNED AS EITHER HALF-WAVE OR FULL-WAVE RECTIFIERS AND MAY BE MOUNTED TO FORM EITHER SINGLE PHASE OR THREE PHASE BRIDGES. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FABRICATED IN THE FORM OF A MONOLITHIC OR THIN FILM STRUCTURE THAT PERFORM THE FUNCTION OF A CIRCUIT, SEE INTEGRATED CIRCUIT (AS MODIFIED). EXCLUDES SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; AND RECTIFIER NETWORK, UNITIZED.
CAGE Information
| Code | Company |
|---|---|
| 82577 | RAYTHEON COMPANY DBA RAYTHEON |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ABMK | OVERALL WIDTH | 0.500 INCHES NOMINAL |
| MATT | MATERIAL | SILICON |
| ALAW | ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 15000.0 PEAK INVERSE VOLTAGE |
| AXGY | MOUNTING METHOD | TERMINAL |
| TEST | TEST DATA DOCUMENT (NON-CORE) | 81755-C10622 DRAWING |
| ABHP | OVERALL LENGTH | 2.750 INCHES NOMINAL |
| ABKW | OVERALL HEIGHT | 0.250 INCHES NOMINAL |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| AFGA | OPERATING TEMP RANGE | -55.0/+150.0 DEG CELSIUS |
| AJUR | CIRCUIT CONNECTION STYLE DESIGNATOR | HALF-WAVE 1 PHASE |
| ALAY | ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC | 0.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 50.00 AMPERES PEAK FORWARD SURGE CURRENT |