Part Number
Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
CAGE Information
Code | Company |
---|---|
F6481 | THALES |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
ABKW | OVERALL HEIGHT | 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
ABHP | OVERALL LENGTH | 1.334 INCHES MINIMUM AND 1.383 INCHES MAXIMUM |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
ABMK | OVERALL WIDTH | 0.602 INCHES MINIMUM AND 0.626 INCHES MAXIMUM |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-247AC |
CTQX | CURRENT RATING PER CHARACTERISTIC | 42.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE |
ABBH | INCLOSURE MATERIAL | PLASTIC |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
CTRD | POWER RATING PER CHARACTERISTIC | 160.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
TTQY | TERMINAL TYPE AND QUANTITY | 3 PRINTED CIRCUIT |
AKPV | MOUNTING FACILITY QUANTITY | 1 |
ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | N-CHANNEL INSULATED GATE TYPE |
AXGY | MOUNTING METHOD | UNTHREADED HOLE |