Part Number
Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
CAGE Information
| Code | Company |
|---|---|
| F6481 | THALES |
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ABHP | OVERALL LENGTH | 1.8 MILLIMETERS MINIMUM AND 2.2 MILLIMETERS MAXIMUM |
| PRMT | PRECIOUS MATERIAL | GOLD |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 35.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | SOT-23 |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 15.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| ABKW | OVERALL HEIGHT | 1.1 MILLIMETERS MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.9 MILLIMETERS NOMINAL |
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 PRINTED CIRCUIT |
| ABMK | OVERALL WIDTH | 2.0 MILLIMETERS MINIMUM AND 2.2 MILLIMETERS MAXIMUM |