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Part Number

Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR

Definition:

AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.

CAGE Information

Code Company
17856 SILICONIX INCORPORATED DIV SILICONIX

Federal Supply Class

Title

SEMICONDUCTOR DEVICES AND ASSOCI

Inclusions:

INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.

Exclusions:

EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.

Characteristics (Decoded)

MRC Requirements Statement Clear Text Reply
CTRD POWER RATING PER CHARACTERISTIC 500.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET
CTQX CURRENT RATING PER CHARACTERISTIC 20.00 MILLIAMPERES SOURCE CUTOFF CURRENT MINOR
PRMT PRECIOUS MATERIAL GOLD
AXGY MOUNTING METHOD TERMINAL
CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND -25.0 MAXIMUM GATE TO SOURCE VOLTAGE
ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE GATE
ABBH INCLOSURE MATERIAL METAL
ALAT CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) N-CHANNEL JUNCTION TYPE
ADAV OVERALL DIAMETER 0.230 INCHES MAXIMUM
CTMZ SEMICONDUCTOR MATERIAL SILICON
CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE
PMLC PRECIOUS MATERIAL AND LOCATION LEAD SURFACES GOLD
ALAS INTERNAL CONFIGURATION FIELD EFFECT
ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM
ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-52
ABHP OVERALL LENGTH 0.150 INCHES MAXIMUM
AYQS TERMINAL CIRCLE DIAMETER 0.100 INCHES NOMINAL
TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD

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