Part Number
Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
CAGE Information
| Code | Company |
|---|---|
| 59656 | DEAN TECHNOLOGY INC. DBA CKE |
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| TTQY | TERMINAL TYPE AND QUANTITY | 3 PIN |
| AXGY | MOUNTING METHOD | TERMINAL |
| ABKW | OVERALL HEIGHT | 0.546 INCHES NOMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ABHP | OVERALL LENGTH | 0.705 INCHES NOMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1.5 MINIMUM GATE TO SOURCE VOLTAGE AND 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 3.5 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES SERVICE VOLTAGE MAXIMUM OF STANDARD RANGE |
| ABMK | OVERALL WIDTH | 0.400 INCHES NOMINAL |
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ABJT | TERMINAL LENGTH | 0.381 INCHES NOMINAL |
| ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | N-CHANNEL INSULATED GATE TYPE |