Part Number
Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
CAGE Information
Code | Company |
---|---|
59993 | INTERNATIONAL RECTIFIER CORPORATION |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
MRC | Requirements Statement | Clear Text Reply |
---|---|---|
CQJX | NOMINAL THREAD SIZE | 0.250 INCHES |
ABHP | OVERALL LENGTH | 1.330 INCHES MAXIMUM |
TEST | TEST DATA DOCUMENT | 95105-204-0186 DRAWING |
AXGY | MOUNTING METHOD | THREADED STUD |
CCDG | OVERALL WIDTH ACROSS FLATS | 0.687 INCHES MAXIMUM |
ABBH | INCLOSURE MATERIAL | METAL |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM FORWARD VOLTAGE, PEAK |
CTRD | POWER RATING PER CHARACTERISTIC | 150.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
TTQY | TERMINAL TYPE AND QUANTITY | 3 TAB, SOLDER LUG |
THSD | THREAD SERIES DESIGNATOR | UNF |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
CTQX | CURRENT RATING PER CHARACTERISTIC | 13.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE |
AKPV | MOUNTING FACILITY QUANTITY | 1 |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-61 |
ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | N-CHANNEL INSULATED GATE TYPE |