Part Number
Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
CAGE Information
| Code | Company |
|---|---|
| 59993 | INTERNATIONAL RECTIFIER CORPORATION |
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.594 INCHES MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 PIN |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
| ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | N-CHANNEL JUNCTION TYPE |
| ABKW | OVERALL HEIGHT | 0.190 INCHES MAXIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 145.00 AMPERES FORWARD CURRENT, AVERAGE ANY ACCEPTABLE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 90.0 DEG CELSIUS JUNCTION |
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ABMK | OVERALL WIDTH | 0.415 INCHES MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 125.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| AXGY | MOUNTING METHOD | TERMINAL AND UNTHREADED HOLE |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| ABJT | TERMINAL LENGTH | 0.550 INCHES MAXIMUM |