Part Number
Part Number:
NSN:
NIIN:
Item Name:
LIGHT EMITTING DIODE
Definition:
A TWO ELECTRODE, SOLID STATE, OPTOELECTRONIC DEVICE THAT EMITS VISIBLE OR INFRARED RADIANT ENERGY WHEN ELECTRICALLY ENERGIZED. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEAT SINK. EXCLUDES LAMP, CARTRIDGE; AND LIGHT, INDICATOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO INFRARED OR RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE (1), PHOTO.
CAGE Information
| Code | Company |
|---|---|
| 81349 | MILITARY SPECIFICATIONS PROMULGATED |
Federal Supply Class
Title
OPTOELECTRONIC DEVICES AND ASSOC
Inclusions:
INCLUDES OPTOELECTRONIC DEVICES AND ASSEMBLIES WHICH DISPLAY NUMERIC, ALPHA-NUMERIC, SYMBOLIC, OR GRAPHIC INFORMATION, EMITTERS, AND NONDISPLAY OPTOELECTRONIC DEVICES, SUCH AS COUPLERS, DETECTORS, AND SWITCHES WHICH PERFORM AN ACTIVE FUNCTION IN AN ELECTRONIC SYSTEM%
Exclusions:
EXCLUDES ELECTRIC LIGHTING FIXTURES, LAMPS, AND ASSOCIATED HARDWARE%
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTSB | LUMINOUS INTENSITY | 2.5 MILLICANDELA NOMINAL |
| AEXK | LENS TRANSPARENCY | TRANSPARENT |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 MAXIMUM BASE SUPPLY VOLTAGE |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/51903 GOVERNMENT SPECIFICATION |
| CTMZ | SEMICONDUCTOR MATERIAL | GALLIUM PHOSPHIDE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 NANOAMPERES SOURCE CUTOFF CURRENT MINIMUM |
| AGAV | END ITEM IDENTIFICATION | 2320011231610E/IFSCM81349 |
| ABBH | INCLOSURE MATERIAL | GLASS |
| AXGY | MOUNTING METHOD | PRESS FIT |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| CTRX | COLOR TONE PRODUCED PER SOURCE | RED LENS |
| ABHP | OVERALL LENGTH | 4.830 MILLIMETERS MAXIMUM |
| ADAV | OVERALL DIAMETER | 5.590 MILLIMETERS MAXIMUM |