Part Number
Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
CAGE Information
| Code | Company |
|---|---|
| 06845 | RAYTHEON COMPANY DBA RAYTHEON |
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| ABHP | OVERALL LENGTH | 0.085 INCHES MAXIMUM |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.020 INCHES NOMINAL |
| AXGY | MOUNTING METHOD | TERMINAL |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CTRD | POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ABJT | TERMINAL LENGTH | 1.500 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| ABMK | OVERALL WIDTH | 0.230 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| ABKW | OVERALL HEIGHT | 0.085 INCHES MAXIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |