Part Number
Part Number:
NSN:
NIIN:
Item Name:
LIGHT EMITTING DIODE
Definition:
A TWO ELECTRODE, SOLID STATE, OPTOELECTRONIC DEVICE THAT EMITS VISIBLE OR INFRARED RADIANT ENERGY WHEN ELECTRICALLY ENERGIZED. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEAT SINK. EXCLUDES LAMP, CARTRIDGE; AND LIGHT, INDICATOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO INFRARED OR RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE (1), PHOTO.
CAGE Information
| Code | Company |
|---|---|
| 50579 | SIEMENS MICROELECTRONICS INC OPTOELE |
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN |
| AXGY | MOUNTING METHOD | TERMINAL |
| ADAV | OVERALL DIAMETER | 0.232 INCHES NOMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS |
| ABKW | OVERALL HEIGHT | 0.339 INCHES NOMINAL |
| CTRX | COLOR TONE PRODUCED PER SOURCE | GREEN SEMICONDUCTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 60.00 MILLIAMPERES FORWARD CURRENT, AVERAGE MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES NOMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |