Part Number
Definition:
TWO OR MORE DISCRETE SEMICONDUCTOR DEVICES SUCH AS DIODE(S) AND/OR TRANSISTOR(S), PERMANENTLY CASED, ENCAPSULATED, OR POTTED TOGETHER TO FORM AN INSEPARABLE UNIT. EXCLUDES DEVICES HAVING ONE OR MORE COMPONENTS OTHER THAN SEMICONDUCTOR DEVICES. THE INDIVIDUALLY DISTINCT DEVICES FORMING THE UNIT MAY BE INTERNALLY CONNECTED. THE UNIT IN ITSELF DOES NOT PERFORM A COMPLETE SPECIFIC FUNCTION AND CANNOT BE ASSIGNED A MORE DEFINITE ITEM NAME. IT MAY INCLUDE OR CONSIST OF INSEPARABLE MATCHED PAIRS. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FORMED ON OR WITHIN A SEMICONDUCTOR MATERIAL SUBSTRATE, FORMED ON AN INSULATING SUBSTRATE OR FORMED ON A COMBINATION OF BOTH OF THESE TYPES, SEE MICROCIRCUIT (AS MODIFIED). EXCLUDES NETWORK (AS MODIFIED); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; AND SEMICONDUCTOR DEVICE ASSEMBLY. DO NOT USE IF MORE SPECIFIC NAME APPLIES.
CAGE Information
| Code | Company |
|---|---|
| 96341 | COBHAM ELECTRONIC SYSTEMS INC. DBA C |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINALS EXTERNAL SURFACES GOLD |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| FEAT | SPECIAL FEATURES | WEAPONS SYSTEM ESSENTIAL |
| PRMT | PRECIOUS MATERIAL | GOLD |
| ABHP | OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MICROAMPERES FORWARD CURRENT, AVERAGE PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| ABBH | INCLOSURE MATERIAL | METAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE AND 1.2 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.210 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| ABJT | TERMINAL LENGTH | 0.200 INCHES MINIMUM |
| ASKA | COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| TEST | TEST DATA DOCUMENT | 80063-A3012736 DRAWING |