Part Number
Part Number:
NSN:
NIIN:
Item Name:
MICROCIRCUIT , DIGITAL
Definition:
A MICROCIRCUIT SPECIFICALLY DESIGNED TO GENERATE, MODIFY, OR PROCESS ELECTRICAL SIGNALS WHICH OPERATE WITH TWO DISTINCT OR BINARY STATES. THESE STATES ARE COMMONLY REFERRED TO AS ON AND OFF, TRUE AND FALSE, HIGH AND LOW, OR "1" AND "0".
CAGE Information
| Code | Company |
|---|---|
| 16236 | DLA LAND AND MARITIME |
Federal Supply Class
Title
MICROCIRCUITS, ELECTRONIC
Inclusions:
INCLUDES INTEGRATED CIRCUIT DEVICES; INTEGRATED CIRCUIT MODULES, INTEGRATED ELECTRONIC DEVICES: HYBRID, MAGNETIC, MOLECULAR, OPTO-ELECTRONIC, AND THIN FILM.
Exclusions:
EXCLUDES SINGLE CIRCUIT ELEMENTS SUCH AS CAPACITORS; RESISTORS; DIODES AND TRANSISTORS; PRINTED CIRCUIT BOARDS AND CIRCUIT CARD ASSEMBLIES; AND FILTERS AND NETWORKS.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| FEAT | SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM |
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUITS, DIGITAL, MEMORY, CMOS 256K X 1 SRAM, MONOLITHIC SILICON |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CSSL | DESIGN FUNCTION AND QUANTITY | 1 MEMORY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |