Part Number
Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
CAGE Information
| Code | Company |
|---|---|
| 7T184 | NTE ELECTRONICS INC SUB OF SOLID STA |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| CTQX | CURRENT RATING PER CHARACTERISTIC | 0.10 AMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | AMPLIFIER |
| ABJT | TERMINAL LENGTH | 0.512 INCHES MAXIMUM |
| CTRD | POWER RATING PER CHARACTERISTIC | 0.9 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 PIN |
| AXGY | MOUNTING METHOD | TERMINAL |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO92 |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CCDG | OVERALL WIDTH ACROSS FLATS | 0.200 INCHES MAXIMUM |
| ABHP | OVERALL LENGTH | 0.339 INCHES MAXIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTRK | TRANSFER RATIO | 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| ABBH | INCLOSURE MATERIAL | PLASTIC |