Part Number
Part Number:
NSN:
NIIN:
Item Name:
LIGHT EMITTING DIODE
Definition:
A TWO ELECTRODE, SOLID STATE, OPTOELECTRONIC DEVICE THAT EMITS VISIBLE OR INFRARED RADIANT ENERGY WHEN ELECTRICALLY ENERGIZED. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEAT SINK. EXCLUDES LAMP, CARTRIDGE; AND LIGHT, INDICATOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO INFRARED OR RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE (1), PHOTO.
CAGE Information
| Code | Company |
|---|---|
| 58307 | GENERAL ATOMICS ELECTRONIC SYSTEMS I |
Federal Supply Class
Title
OPTOELECTRONIC DEVICES AND ASSOC
Inclusions:
INCLUDES OPTOELECTRONIC DEVICES AND ASSEMBLIES WHICH DISPLAY NUMERIC, ALPHA-NUMERIC, SYMBOLIC, OR GRAPHIC INFORMATION, EMITTERS, AND NONDISPLAY OPTOELECTRONIC DEVICES, SUCH AS COUPLERS, DETECTORS, AND SWITCHES WHICH PERFORM AN ACTIVE FUNCTION IN AN ELECTRONIC SYSTEM%
Exclusions:
EXCLUDES ELECTRIC LIGHTING FIXTURES, LAMPS, AND ASSOCIATED HARDWARE%
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ALAS | INTERNAL CONFIGURATION | POINT CONTACT |
| CTSB | LUMINOUS INTENSITY | 12.0 MILLICANDELA NOMINAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 120.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTRX | COLOR TONE PRODUCED PER SOURCE | GREEN LENS |
| CTMZ | SEMICONDUCTOR MATERIAL | GALLIUM PHOSPHIDE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.8 MAXIMUM FORWARD VOLTAGE, DC |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS AMBIENT AIR |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PN |
| ABHP | OVERALL LENGTH | 0.675 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | PRESS FIT |
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ADAV | OVERALL DIAMETER | 0.295 INCHES MAXIMUM |
| AEXK | LENS TRANSPARENCY | TRANSLUCENT |