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Part Number

Part Number:
NSN:
NIIN:
Item Name:
LIGHT EMITTING DIODE

Definition:

A TWO ELECTRODE, SOLID STATE, OPTOELECTRONIC DEVICE THAT EMITS VISIBLE OR INFRARED RADIANT ENERGY WHEN ELECTRICALLY ENERGIZED. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEAT SINK. EXCLUDES LAMP, CARTRIDGE; AND LIGHT, INDICATOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO INFRARED OR RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE (1), PHOTO.

CAGE Information

Code Company
04713 FREESCALE SEMICONDUCTOR INC.

Federal Supply Class

Title

OPTOELECTRONIC DEVICES AND ASSOC

Inclusions:

INCLUDES OPTOELECTRONIC DEVICES AND ASSEMBLIES WHICH DISPLAY NUMERIC, ALPHA-NUMERIC, SYMBOLIC, OR GRAPHIC INFORMATION, EMITTERS, AND NONDISPLAY OPTOELECTRONIC DEVICES, SUCH AS COUPLERS, DETECTORS, AND SWITCHES WHICH PERFORM AN ACTIVE FUNCTION IN AN ELECTRONIC SYSTEM%

Exclusions:

EXCLUDES ELECTRIC LIGHTING FIXTURES, LAMPS, AND ASSOCIATED HARDWARE%

Characteristics (Decoded)

MRC Requirements Statement Clear Text Reply
ALAS INTERNAL CONFIGURATION POINT CONTACT
CTRD POWER RATING PER CHARACTERISTIC 350.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE
CTQX CURRENT RATING PER CHARACTERISTIC 150.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET
ABHP OVERALL LENGTH 0.123 INCHES MAXIMUM
CTRX COLOR TONE PRODUCED PER SOURCE INFRARED SEMICONDUCTOR
ADAV OVERALL DIAMETER 0.093 INCHES MAXIMUM
ASCQ INTERNAL JUNCTION CONFIGURATION PN
ABBH INCLOSURE MATERIAL GLASS
CTMZ SEMICONDUCTOR MATERIAL GALLIUM ARSENIDE
CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE
AXGY MOUNTING METHOD PRESS FIT
CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 3.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS JUNCTION

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