Part Number
Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
CAGE Information
| Code | Company |
|---|---|
| 80063 | US ARMY COMMUNICATIONS & ELECTRONICS |
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| AXGY | MOUNTING METHOD | TERMINAL |
| AXGY | MOUNTING METHOD | TERMINAL |
| ABBH | INCLOSURE MATERIAL | METAL |
| ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES SOURCE CUTOFF CURRENT MINOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.8 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 7.0 MAXIMUM PEAK-POINT VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-18 |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES MAXIMUM |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | N-CHANNEL INSULATED GATE TYPE |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |