Part Number
Definition:
TWO OR MORE DIODE SEMICONDUCTOR DEVICES DESIGNED TO FUNCTION AS A UNIT IN CHANGING ALTERNATING CURRENT TO DIRECT CURRENT. THE DIODE DEVICES ARE INTERNALLY CONNECTED IN SERIES, AND ARE PERMANENTLY CASED, ENCAPSULATED, POTTED, OR MOLDED TOGETHER TO FORM AN INSEPARABLE UNIT. THESE UNITS MAY BE DESIGNED AS EITHER HALF-WAVE OR FULL-WAVE RECTIFIERS AND MAY BE MOUNTED TO FORM EITHER SINGLE PHASE OR THREE PHASE BRIDGES. FOR INTERCONNECTED ITEMS ARRANGED IN STACK(S), SEE RECTIFIER, SEMICONDUCTOR DEVICE. FOR ITEMS FABRICATED IN THE FORM OF A MONOLITHIC OR THIN FILM STRUCTURE THAT PERFORM THE FUNCTION OF A CIRCUIT, SEE INTEGRATED CIRCUIT (AS MODIFIED). EXCLUDES SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; AND RECTIFIER NETWORK, UNITIZED.
CAGE Information
| Code | Company |
|---|---|
| 80063 | US ARMY COMMUNICATIONS & ELECTRONICS |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| FEAT | SPECIAL FEATURES | SILICON;SINGLE PHASE FULL WAVE BRIDGE;600V PEAK INVERSE VOLTAGE;420V RMS VOLTAGE;1.5 AMP AVERAGE RECTIFIED CURRENT AT 25 DEG C AND 1.05 AMP AT 100 DEG C;10 AMP RECURRENT SURGE CURRENT AT 25 DEG C;HERMETICALLY SEALED UNITS;MOLDED CASE;0.875 IN. DIA;0.250 IN. H;4 SOLDER STUD TYPE TERMINALS 0.137 IN. MAX H;TERMINALS EQUALLY SPACED ON 0.625 IN. DIA CIRCLE;0NE 0.144 IN. DIA UNTHREADED MTG HOLE COUNTERBORED 0.310 IN. DIA BY 0.125 IN. DEEP THRU CENTER OF CASE;M55.0 TO P150.0 DEG C OPERATING TEMP;STORAGE TEMP RANGE:M55.0 TO P150.0 DEG CELCIUS |