Part Number
Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
CAGE Information
| Code | Company |
|---|---|
| 17856 | SILICONIX INCORPORATED DIV SILICONIX |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
| AXGY | MOUNTING METHOD | TERMINAL |
| ABBH | INCLOSURE MATERIAL | METAL |
| ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | N-CHANNEL JUNCTION TYPE |
| ADAV | OVERALL DIAMETER | 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-39 |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ABHP | OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.10 AMPERES SOURCE CUTOFF CURRENT MAXIMUM OF STANDARD RANGE |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |