Part Number
Part Number:
NSN:
NIIN:
Item Name:
TRANSISTOR
Definition:
AN ACTIVE SEMICONDUCTOR DEVICE WITH THREE OR MORE ELECTRODES. MAY OR MAY NOT INCLUDE MOUNTING HARDWARE AND/OR HEATSINK. EXCLUDES SEMICONDUCTOR DEVICE, DIODE AND SEMICONDUCTOR DEVICE, THYRISTOR. FOR SOLID STATE DEVICES WHICH ARE RESPONSIVE TO VISIBLE OR INFRARED RADIANT ENERGY, SEE SEMICONDUCTOR DEVICE, PHOTO.
CAGE Information
| Code | Company |
|---|---|
| 17856 | SILICONIX INCORPORATED DIV SILICONIX |
Federal Supply Class
Title
SEMICONDUCTOR DEVICES AND ASSOCI
Inclusions:
INCLUDES SEMICONDUCTOR ASSEMBLIES; SEMICONDUCTOR DIODES; SEMICONDUCTOR RECTIFIERS, SEMICONDUCTOR THYRISTORS; TRANSISTORS; UNITIZED SEMICONDUCTORS; ASSOCIATED HARDWARE EXCEPT SOCKETS.
Exclusions:
EXCLUDES MICROCIRCUITS; OPTOELECTRONIC DEVICES AND ASSOCIATED HARDWARE.
Characteristics (Decoded)
| MRC | Requirements Statement | Clear Text Reply |
|---|---|---|
| TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN |
| ABKW | OVERALL HEIGHT | 0.165 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| CTQX | CURRENT RATING PER CHARACTERISTIC | -3.00 AMPERES FORWARD CURRENT, AVERAGE ANY ACCEPTABLE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -80.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
| ALAT | CHANNEL POLARITY AND CONTROL TYPE (NON-CORE) | P-CHANNEL INSULATED GATE TYPE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-237 |
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ABHP | OVERALL LENGTH | 0.280 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.160 INCHES MAXIMUM |